| PART |
Description |
Maker |
| GE28F320W30B70 GE28F320W30B85 RD28F6408W30T85 28F6 |
Segmented Alphanumeric LED; Display Technology:LED; No. of Digits/Alpha:1; Body Material:GaAsP; LED Color:Red; Leaded Process Compatible:Yes; Luminous Intensity:7.5mcd RoHS Compliant: Yes 2M X 16 FLASH 1.8V PROM, PBGA56
1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) 2M X 16 FLASH 1.8V PROM, PBGA56
1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) SPECIALTY MEMORY CIRCUIT, PBGA80
1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) 1.8伏英特尔无线闪存伏的I / O和SRAM（宽30
|
Intel, Corp.
Intel Corp.
|
| PF38F5070M0P0B PF38F5070M0Q0B PC48F4400PPT00 PC48F |
Numonyx Wireless Flash Memory (W18)
|
Numonyx B.V
|
| PC48F4400PWU00 PC48F4400PWUB0 RD38F5070MMT0B PF38F |
Numonyx Wireless Flash Memory (W18)
|
Numonyx B.V
http://
|
| 313272-06 PF38F5070M0Y0B0 |
Numonyx Wireless Flash Memory (W18) with AD Multiplexed IO
|
Numonyx B.V
|
| RD28F3204W30B70 GT28F640W30T85 |
1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30)
|
Intel Corporation
|
| GE28F640L18 |
Wireless Flash Memory
|
Intel Corporation
|
| CY7C60323-LTXC CY7C60323-PVXC CY7C60323-LTXCT CY7C |
enCoRe III Low Voltage Wireless presenter tools
enCoRe?/a> III Low Voltage Wireless presenter tools
enCoRe(TM) III Low Voltage; Core: M8C; Code Memory Architecture: Flash; Code Memory Size: 8 KB; RAM size: 512 B MULTIFUNCTION PERIPHERAL, QCC32
enCoRe(TM) III Low Voltage; Core: M8C; Code Memory Architecture: Flash; Code Memory Size: 8 KB; RAM size: 512 B
|
Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
|
| LH28F008SCHT LH28F008SCHT-85 LH28F008SCN-L120 LH28 |
8MBIT (1 MB x 8)Smart Voltage Flash Memory 40pin STSOP
8Mbit Flash Memory
8-MBIT(1 MB x 8) SmartVoltage Flash MEMORY
8MBIT (1 MB x 8)Smart Voltage Flash Memory 44pin PSOP
|
Sharp Electrionic Components
|
| AM29F080B-75SC |
Flash Memory IC; Memory Size:8Mbit; Memory Configuration:1M x 8; Package/Case:44-SOIC; Supply Voltage:5V; Access Time, Tacc:75ns; Mounting Type:Surface Mount 1M X 8 FLASH 5V PROM, 70 ns, PDSO44
|
Spansion, Inc.
|
| MB84VB2000-10 MB84VB2001 MB84VB2001-10 |
PT 8C 8#20 PIN RECP 1M X 8 FLASH 3V PROM, 100 ns, PBGA48
8M (x 8/x 16) FLASH MEMORY & 8M (x 8/x 16) FLASH MEMORY
|
Fujitsu, Ltd.
Fujitsu Component Limited.
|
| UM6264 UM6264M-10 UM6264M-10L UM6264-12 UM6264-10 |
Flash - NOR IC; Memory Type:FLASH; Access Time, Tacc:90ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:64-BGA; Memory Configuration:64K x 8; Memory Size:32MB; NOR Flash Type:Page Mode Access
8K x 8 CMOS SRAM
|
United Microelectronics Corporation
ETC
UMC[UMC Corporation]
|
| MB84VA2000-10 MB84VA2001-10 MB84VA2000 |
MCP (Multi-Chip Package) FLASH MEMORY & SRAM 8M (x 8) FLASH MEMORY & 2M (x 8) STATIC RAM
|
Fujitsu Microelectronics
FUJITSU[Fujitsu Media Devices Limited]
|
